Basic Electronics (3110016) MCQs

MCQs of Diode theory and applications

Showing 21 to 30 out of 108 Questions
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21.
A forward biased PN junction has a resistance of the ______.
(a) Order of Ω
(b) Order of kΩ
(c) Oder of MΩ
(d) None of the above
Answer:

Option (a)

22.
The battery connections required to forward bias a PN junction are _______.
(a) +ve terminal to P and –ve terminal to N
(b) –ve terminal to P and +ve terminal to N
(c) –ve terminal to P and –ve terminal to N
(d) None of the above
Answer:

Option (a)

23.
The barrier voltage at a PN junction for germanium is about _______.
(a) 3.5 V
(b) 3 V
(c) Zero
(d) 0.3 V
Answer:

Option (d)

24.
In the depletion region of a PN junction, there is a shortage of ________.
(a) Acceptor ions
(b) Holes and electrons
(c) Donor ions
(d) None of the above
Answer:

Option (b)

25.
A reverse biased PN junction has _______.
(a) Very narrow depletion layer
(b) Almost no current
(c) Very low resistance
(d) Large current
Answer:

Option (b)

26.
A PN junction acts as a ________.
(a) Controlled switch
(b) Bidirectional switch
(c) Unidirectional switch
(d) None of the above
Answer:

Option (c)

27.
A reverse biased PN junction has resistance of the ________.
(a) Order of Ω
(b) Order of kΩ
(c) Order of MΩ
(d) None of the above
Answer:

Option (c)

28.
The leakage current across a PN junction is due to ________.
(a) Minority carriers
(b) Majority carriers
(c) Junction capacitance
(d) None of the above
Answer:

Option (a)

29.
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on ________.
(a) Junction capacitance
(b) Minority carriers
(c) Majority carriers
(d) None of the above
Answer:

Option (b)

30.
With forward bias to a PN junction, the width of depletion layer ______.
(a) Decreases
(b) Increases
(c) Remains the same
(d) None of the above
Answer:

Option (a)

Showing 21 to 30 out of 108 Questions
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