Basic Electronics (3110016) MCQs

MCQs of Field effect transistors (FET) and its biasing

Showing 81 to 90 out of 99 Questions
6 7 8 9 10
81.
The VGS(on) of an n-channel E-MOSFET is
(a) Less than the threshold voltage
(b) Equal to the gate-source voltage
(c) Greater than VDS(ON)
(d) Greater than VGS(ON)
Answer:

Option (d)

82.
An ordinary resistor is an example of
(a) A three-terminal device
(b) An active load
(c) A passive load
(d) A switching device
Answer:

Option (c)

83.
An E-MOSFET with its gate connected to its drain is an example of
(a) A three-terminal device
(b) An active load
(c) A passive load
(d) A switching device
Answer:

Option (b)

84.
An E-MOSFET that operates at cutoff or in the ohmic region is an example of
(a) A current source
(b) An active load
(c) A passive load
(d) A switching device
Answer:

Option (d)

85.
VMOS devices generally
(a) Switch off faster than BJTs
(b) Carry low values of current
(c) Have a negative temperature coefficient
(d) Are used as CMOS inverters
Answer:

Option (a)

86.
A D-MOSFET is considered to be a
(a) Normally off device
(b) Normally on device
(c) Current controlled device
(d) High-power switch
Answer:

Option (b)

87.
CMOS stands for
(a) Common MOS
(b) Active-load switching
(c) P-channel and N-channel devices
(d) Complementary MOS
Answer:

Option (d)

88.
VGS(on) is always
(a) Less than VGS(TH)
(b) Equal to VDS(ON)
(c) Greater than VGS(TH)
(d) Negative
Answer:

Option (c)

89.
With active load switching, the upper E-MOSFET is a
(a) Two terminal device
(b) Three terminal device
(c) Switch
(d) Small resistance
Answer:

Option (a)

90.
CMOS devices use
(a) Bipolar transistor
(b) Complementary E-MOSFETs
(c) Class A operation
(d) DMOS devices
Answer:

Option (b)

Showing 81 to 90 out of 99 Questions
6 7 8 9 10