Basic Electronics (3110016) MCQs

MCQs of Field effect transistors (FET) and its biasing

Showing 91 to 99 out of 99 Questions
7 8 9 10
91.
The main advantages of CMOS is its
(a) High power rating
(b) Small-signal operation
(c) Switching capability
(d) Low power consumption
Answer:

Option (d)

92.
Power FETs are
(a) Integrated circuits
(b) Small-signal devices
(c) Used mostly with analog signals
(d) Used to switch large currents
Answer:

Option (d)

93.
When the internal temperature increases in a power FET, the
(a) Threshold voltage increases
(b) Gate current decreases
(c) Drain current decreases
(d) Saturation current increases
Answer:

Option (c)

94.
Most small-signals E-MOSFETs are found in
(a) Heavy-current application
(b) Discrete circuits
(c) Disk drives
(d) Integrated circuits
Answer:

Option (d)

95.
Most power FETs are
(a) Used in high current applications
(b) Digital computers
(c) RF stages
(d) Integrated circuits
Answer:

Option (a)

96.
An n-channel E-MOSFET conducts when it has
(a) VGS > VP
(b) An n-type inversion layer
(c) VDS> 0
(d) Depletion layers
Answer:

Option (b)

97.
With CMOS, the upper MOSFET is
(a) A passive load
(b) An active load
(c) Nonconducting
(d) Complementary
Answer:

Option (d)

98.
The high output of a CMOS inverter is
(a) VDD/2
(b) VGS
(c) VDS
(d) VDD
Answer:

Option (d)

99.
The RDS(ON) of a power FET
(a) Is always large
(b) Has a negative temperature coefficient
(c) Has a positive temperature coefficient
(d) Is an active load
Answer:

Option (c)

Showing 91 to 99 out of 99 Questions
7 8 9 10