Power Electronics (3140915) MCQs

MCQs of Power switching devices

Showing 1 to 10 out of 54 Questions
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1.
The MOSFET combines the areas of _______ & _________
(a) field effect & MOS technology
(b) semiconductor & TTL
(c) mos technology & CMOS technology
(d) none of the mentioned
Answer:

Option (a)

2.
Which of the following terminals does not belong to the MOSFET?
(a) Drain
(b) Gate
(c) Base
(d) Source
Answer:

Option (c)

3.
Choose the correct statement
(a) MOSFET is a uncontrolled device
(b) MOSFET is a voltage controlled device
(c) MOSFET is a current controlled device
(d) MOSFET is a temperature controlled device
Answer:

Option (b)

4.
Choose the correct statement(s) i) The gate circuit impedance of MOSFET is higher than that of a BJT ii) The gate circuit impedance of MOSFET is lower than that of a BJT iii) The MOSFET has higher switching losses than that of a BJT iv) The MOSFET has lower switching losses than that of a BJT
(a) Both i & ii
(b) Both ii & iv
(c) Both i & iv
(d) Only ii
Answer:

Option (c)

5.
Choose the correct statement
(a) MOSFET is a unipolar, voltage controlled, two terminal device
(b) MOSFET is a bipolar, current controlled, three terminal device
(c) MOSFET is a unipolar, voltage controlled, three terminal device
(d) MOSFET is a bipolar, current controlled, two terminal device
Answer:

Option (c)

6.
The controlling parameter in MOSFET is
(a) Vds
(b) Ig
(c) Vgs
(d) Is
Answer:

Option (c)

7.
In the internal structure of a MOSFET, a parasitic BJT exists between the
(a) source & gate terminals
(b) source & drain terminals
(c) drain & gate terminals
(d) there is no parasitic BJT in MOSFET
Answer:

Option (b)

8.
The output characteristics of a MOSFET, is a plot of
(a) Id as a function of Vgs with Vds as a parameter
(b) Id as a function of Vds with Vgs as a parameter
(c) Ig as a function of Vgs with Vds as a parameter
(d) Ig as a function of Vds with Vgs as a parameter
Answer:

Option (b)

9.
At turn-on the initial delay or turn on delay is the time required for the
(a) input inductance to charge to the threshold value
(b) input capacitance to charge to the threshold value
(c) input inductance to discharge to the threshold value
(d) input capacitance to discharge to the threshold value
Answer:

Option (b)

10.
Which among the following devices is the most suited for high frequency applications?
(a) BJT
(b) IGBT
(c) MOSFET
(d) SCR
Answer:

Option (c)

Showing 1 to 10 out of 54 Questions
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