MCQs of Power switching devices (Power Electronics - 3140915)

Power Electronics (3140915) MCQs

MCQs of Power switching devices

Showing 31 to 40 out of 54 Questions

31.

As the FSOA increases, the pulse width

(a)	decreases
(b)	increases
(c)	remains constant
(d)	vanishes

32.

The SOA for a MOSFET is plotted for

(a)	Id versus Vds
(b)	Ig versus Id
(c)	Ig versus Vds
(d)	Id versus Vgs

33.

The SOA for an IGBT is plotted for

(a)	Ic versus Vge
(b)	Ig versus Ic
(c)	Ig versus Vce
(d)	Ic versus Vce

34.

For a diode, reverse recovery time is defined as the time between the instant diode current becomes zero and the instant reverse recovery current decays to

(a)	zero
(b)	10% of reverse peak current I_RM
(c)	25% of I_RM
(d)	15% of I_RM

35.

As compared to power MOSFET, a BJT has

(a)	lower switching losses but higher conduction loss
(b)	higher switching losses and higher conduction loss
(c)	higher switching losses but lower conduction loss
(d)	lower switching losses and lower conduction loss

36.

Choose the correct statement :

(a)	MOSFET has positive temperature coefficient (TC) whereas BJT has negative TC
(b)	Both MOSFET and BJT have positive TC
(c)	Both MOSFET and BJT have negative TC
(d)	MOSFET has negative TC whereas BJT has positive TC

37.

Choose the correct statement :

(a)	Both MOSFET and BJT are voltage controlled devices
(b)	Both MOSFET and BJT are current controlled devices
(c)	MOSFET is a voltage CD whereas BJT is a current controlled devices
(d)	MOSFET is a current CD whereas BJT is a voltage controlled devices

38.

Secondary breakdown occurs in

(a)	MOSFET but not in BJT
(b)	both MOSFET and BJT
(c)	BJT but not in MOSFET
(d)	none of these

39.

When anode is positive with respect to cathode in an SCR, the number of blocked p-n junctions is

(a)	1
(b)	2
(c)	3
(d)	4

40.

When cathode is positive with respect to anode in an SCR, the number of blocked p-n junctions is

(a)	1
(b)	2
(c)	3
(d)	4

Showing 31 to 40 out of 54 Questions