MCQs of Power switching devices (Power Electronics - 3140915)

Showing 21 to 30 out of 54 Questions

21.

The structure of the IGBT is a

(a)	P-N-P structure connected by a MOS gate
(b)	N-N-P-P structure connected by a MOS gate
(c)	P-N-P-N structure connected by a MOS gate
(d)	N-P-N-P structure connected by a MOS gate

22.

The major drawback of the first generation IGBTs was that, they had

(a)	latch-up problems
(b)	noise & secondary breakdown problems
(c)	sluggish operation
(d)	latch-up & secondary breakdown problems

23.

The static V-I curve of an IGBT is plotted with

24.

Latch-up occurs in an IGBT when

(a)	Vce reaches a certain value
(b)	Ic reaches a certain value
(c)	Ig reaches a certain value
(d)	the device temperature reaches a certain value

25.

In an IGBT, during the turn-on time

26.

Choose the correct statement

(a)	IGBTs have higher switching losses as compared to BJTs
(b)	IGBTs have secondary breakdown problems
(c)	IGBTs have lower gate drive requirements
(d)	IGBTs are current controlled devices

27.

The approximate equivalent circuit of an IGBT consists of

28.

The body of an IGBT consists of a

29.

At present, the state-of-the-art semiconductor devices are begin manufactured using

30.

The forward safe operating area (FSOA) pertains to the operation when

(a)	the device is fired at a 50% Duty cycle
(b)	the device is forward-biased
(c)	the device is operated on AC
(d)	the device is operated on DC

Showing 21 to 30 out of 54 Questions