11. |
Choose the correct statement
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Answer:
Option (d) |
12. |
MOSFETs are voltage controlled devices. They have high gate circuit impedance and are PTC devices.
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Answer:
Option (a) |
13. |
The N-channel MOSFET is considered better than the P-channel MOSFET due to its
|
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Answer:
Option (d) |
14. |
IGBT possess
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Answer:
Option (b) |
15. |
IGBT & BJT both posses ___
|
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Answer:
Option (a) |
16. |
The three terminals of the IGBT are
|
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Answer:
Option (c) |
17. |
In IGBT, the p+ layer connected to the collector terminal is called as the
|
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Answer:
Option (b) |
18. |
The controlling parameter in IGBT is the
|
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Answer:
Option (b) |
19. |
In IGBT, the n– layer above the p+ layer is called as the
|
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Answer:
Option (a) |
20. |
The voltage blocking capability of the IGBT is determined by the
|
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Answer:
Option (d) |