Power Electronics (3140915) MCQs

MCQs of Power switching devices

Showing 11 to 20 out of 54 Questions
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11.
Choose the correct statement
(a) MOSFET has a positive temperature co-efficient
(b) MOSFET has a high gate circuit impedance
(c) MOSFET is a voltage controlled device
(d) All of the mentioned
Answer:

Option (d)

12.
MOSFETs are voltage controlled devices. They have high gate circuit impedance and are PTC devices.
(a) Zero
(b) Maximum
(c) Id(on)
(d) Idd
Answer:

Option (a)

13.
The N-channel MOSFET is considered better than the P-channel MOSFET due to its
(a) low noise levels
(b) TTL compatibility
(c) lower input impedance
(d) faster operation
Answer:

Option (d)

14.
IGBT possess
(a) low input impedance
(b) high input impedance
(c) high on-state resistance
(d) second breakdown problems
Answer:

Option (b)

15.
IGBT & BJT both posses ___
(a) low on-state power losses
(b) high on-state power losses
(c) low switching losses
(d) high input impedance
Answer:

Option (a)

16.
The three terminals of the IGBT are
(a) base, emitter & collector
(b) gate, source & drain
(c) gate, emitter & collector
(d) base, source & drain
Answer:

Option (c)

17.
In IGBT, the p+ layer connected to the collector terminal is called as the
(a) drift layer
(b) injection layer
(c) body layer
(d) collector Layer
Answer:

Option (b)

18.
The controlling parameter in IGBT is the
(a) IG
(b) VGE
(c) IC
(d) VCE
Answer:

Option (b)

19.
In IGBT, the n– layer above the p+ layer is called as the
(a) drift layer
(b) injection layer
(c) body layer
(d) collector Layer
Answer:

Option (a)

20.
The voltage blocking capability of the IGBT is determined by the
(a) injection layer
(b) body layer
(c) metal used for the contacts
(d) drift layer
Answer:

Option (d)

Showing 11 to 20 out of 54 Questions
1 2 3 4 5 6